| Кількість | Ціна |
|---|---|
| 1+ | 2115.98 грн |
| 10+ | 1670.06 грн |
| 100+ | 1255.31 грн |
| 500+ | 1188.50 грн |
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Технічний опис FMM22-06PF IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC, Packaging: Tube, Package / Case: i4-Pac™-5, Mounting Type: Through Hole, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 130W, Drain to Source Voltage (Vdss): 600V, Current - Continuous Drain (Id) @ 25°C: 12A, Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V, Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V, Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: ISOPLUS i4-PAC™, Part Status: Active.
Інші пропозиції FMM22-06PF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FMM22-06PF | IXYS |
Description: MOSFET 2N-CH 600V 12A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 130W Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ISOPLUS i4-PAC™ Part Status: Active |
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| FMM22-06PF |
Виробник: IXYS
Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Description: MOSFET 2N-CH 600V 12A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 130W
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.