FMM50-025TF IXYS
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
Polarisation: unipolar
Case: ISOPLUS i4-pac™ x024a
Semiconductor structure: double series
Reverse recovery time: 84ns
Drain-source voltage: 250V
Drain current: 30A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 125W
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; Trench
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 130A
Mounting: THT
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1093.43 грн |
3+ | 959.69 грн |
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Технічний опис FMM50-025TF IXYS
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A, Polarisation: unipolar, Case: ISOPLUS i4-pac™ x024a, Semiconductor structure: double series, Reverse recovery time: 84ns, Drain-source voltage: 250V, Drain current: 30A, On-state resistance: 60mΩ, Type of transistor: N-MOSFET x2, Power dissipation: 125W, Kind of package: tube, Gate charge: 78nC, Technology: HiPerFET™; Trench, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 130A, Mounting: THT, кількість в упаковці: 1 шт.
Інші пропозиції FMM50-025TF за ціною від 1195.93 грн до 1312.12 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||
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FMM50-025TF | Виробник : IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A Polarisation: unipolar Case: ISOPLUS i4-pac™ x024a Semiconductor structure: double series Reverse recovery time: 84ns Drain-source voltage: 250V Drain current: 30A On-state resistance: 60mΩ Type of transistor: N-MOSFET x2 Power dissipation: 125W Kind of package: tube Gate charge: 78nC Technology: HiPerFET™; Trench Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 130A Mounting: THT кількість в упаковці: 1 шт |
на замовлення 25 шт: термін постачання 7-14 дні (днів) |
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FMM50-025TF | Виробник : IXYS |
Description: MOSFET 2N-CH 250V 30A I4-PAC Packaging: Tube Package / Case: i4-Pac™-5 Mounting Type: Through Hole Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125W Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 30A Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS i4-PAC™ |
товар відсутній |
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FMM50-025TF | Виробник : IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 250V 30A |
товар відсутній |