FMMT411FDBW-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: SS BIPOLAR TRANSISTORS W-DFN2020
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Avalanche Mode
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 110MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.7 W
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Технічний опис FMMT411FDBW-7 Diodes Incorporated
Description: SS BIPOLAR TRANSISTORS W-DFN2020, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN - Avalanche Mode, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V, Frequency - Transition: 110MHz, Supplier Device Package: W-DFN2020-3 (Type A), Current - Collector (Ic) (Max): 5 A, Voltage - Collector Emitter Breakdown (Max): 15 V, Power - Max: 1.7 W.
Інші пропозиції FMMT411FDBW-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| FMMT411FDBW-7 | Виробник : Diodes Incorporated |
Bipolar Transistors - BJT Avalanche Transistor W-DFN2020-3/SWP T&R 3K |
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