FP150R12KT4BPSA1 Infineon Technologies


Infineon-FP150R12KT4-DS-v03_00-EN.pdf?fileId=5546d4625b62cd8a015ba52115ac662e
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 150A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 3 шт:

термін постачання 21-31 дні (днів)
КількістьЦіна
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Технічний опис FP150R12KT4BPSA1 Infineon Technologies

Description: IGBT MODULE 1200V 150A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V.