FP25R12U1T4BPSA1

FP25R12U1T4BPSA1 Infineon Technologies


7161ds_fp25r12u1t4_2_0.pdffolderiddb3a304412b407950112b4095b0601e3fil.pdf Виробник: Infineon Technologies
Trans IGBT Module N-CH 1200V 39A 190W Tray
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Технічний опис FP25R12U1T4BPSA1 Infineon Technologies

Description: IGBT MOD 1200V 39A 190W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 39 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 190 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V.

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FP25R12U1T4BPSA1 FP25R12U1T4BPSA1 Виробник : Infineon Technologies Infineon-FP25R12U1T4-DS-v02_00-en_de.pdf?fileId=db3a3043243b5f170124e8c0fed01ade Description: IGBT MOD 1200V 39A 190W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
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