Технічний опис FP35R12KT4B15BOSA1 Infineon Technologies
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A, Application: frequency changer; Inverter, Case: AG-ECONO2-4, Pulsed collector current: 70A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-in PCB, Type of module: IGBT, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 35A, Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge, Power dissipation: 210W, Mechanical mounting: screw.
Інші пропозиції FP35R12KT4B15BOSA1
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FP35R12KT4B15BOSA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 35A 210W 24-Pin ECONO2-5 Tray |
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FP35R12KT4B15BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 35A 210W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
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| FP35R12KT4B15BOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 35A Application: frequency changer; Inverter Case: AG-ECONO2-4 Pulsed collector current: 70A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 35A Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Power dissipation: 210W Mechanical mounting: screw |
товар відсутній |