Технічний опис FP35R12KT4B15BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 35A 210W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 210 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Інші пропозиції FP35R12KT4B15BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FP35R12KT4B15BOSA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 35A 210W 24-Pin ECONO2-5 Tray |
товару немає в наявності |
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FP35R12KT4B15BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 35A 210W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 210 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
товару немає в наявності |