FP50R06W2E3B11BOMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 65A 175W MODULE
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 175 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 65 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
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Технічний опис FP50R06W2E3B11BOMA1 Infineon Technologies
Description: IGBT MODULE 600V 65A 175W MODULE, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 175 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 65 A, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes.
Інші пропозиції FP50R06W2E3B11BOMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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FP50R06W2E3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE 600V 65A 175W MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 65 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 175 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. |
| FP50R06W2E3B11BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A Type of semiconductor module: IGBT Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Collector current: 50A Gate-emitter voltage: ±20V Power dissipation: 175W Technology: EasyPIM™ 2B Case: AG-EASY2B-2 Mechanical mounting: screw Pulsed collector current: 100A Max. off-state voltage: 0.6kV Electrical mounting: Press-in PCB Semiconductor structure: diode/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
FP50R06W2E3B11BOMA1 | Infineon Technologies |
Trans IGBT Module N-CH 600V 65A 175W 23-Pin EASY2B-2 Tray |
товару немає в наявності |
Мінімальне замовлення: 15 шт В кошику од. на суму грн. |
| FP50R06W2E3B11BOMA1 |
|
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 65A 175W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
Description: IGBT MODULE 600V 65A 175W MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 175 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.1 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.
| FP50R06W2E3B11BOMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 175W
Technology: EasyPIM™ 2B
Case: AG-EASY2B-2
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 50A
Type of semiconductor module: IGBT
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 175W
Technology: EasyPIM™ 2B
Case: AG-EASY2B-2
Mechanical mounting: screw
Pulsed collector current: 100A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
товару немає в наявності
В кошику
од. на суму грн.
| FP50R06W2E3B11BOMA1 |
|
Виробник: Infineon Technologies
Trans IGBT Module N-CH 600V 65A 175W 23-Pin EASY2B-2 Tray
Trans IGBT Module N-CH 600V 65A 175W 23-Pin EASY2B-2 Tray
товару немає в наявності
Мінімальне замовлення: 15 шт
В кошику
од. на суму грн.