FP50R12KE3BOSA1 Infineon Technologies


Infineon-FP50R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b430aafc5191
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 75A 280W
Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 75 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Module
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Технічний опис FP50R12KE3BOSA1 Infineon Technologies

Description: IGBT MOD 1200V 75A 280W, Input Capacitance (Cies) @ Vce: 3.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 280 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 75 A, Part Status: Active, IGBT Type: NPT, Supplier Device Package: Module, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 125°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.