FP50R12KT4B11BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Відгуки про товар
Написати відгук
Технічний опис FP50R12KT4B11BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 280 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Discontinued at Digi-Key, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Three Phase Inverter, Input: Standard.
Інші пропозиції FP50R12KT4B11BOSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
FP50R12KT4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 50A 280W MODInput Capacitance (Cies) @ Vce: 2.8 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 280 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Discontinued at Digi-Key IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
|
FP50R12KT4B11BOSA1 | Infineon Technologies |
IGBT Modules LOW POWER ECONO |
товару немає в наявності |
В кошику од. на суму грн. |
| FP50R12KT4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 50A 280W MOD
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1200V 50A 280W MOD
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 280 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Discontinued at Digi-Key
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| FP50R12KT4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
IGBT Modules LOW POWER ECONO
IGBT Modules LOW POWER ECONO
товару немає в наявності
В кошику
од. на суму грн.



