FP50R12N2T7PBPSA1 Infineon Technologies

Description: 1200 V, 50 A PIM IGBT MODULE, Configuration: Three Phase Inverter, Input: Three Phase Bridge Rectifier, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray, Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V, Current - Collector Cutoff (Max): 4 µA, Power - Max: 20 mW, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 50 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: AG-ECONO2B, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A, Operating Temperature: -40°C ~ 175°C (TJ).