FP50R12N2T7PBPSA1 Infineon Technologies

Description: 1200 V, 50 A PIM IGBT MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: AG-ECONO2B, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 4 µA, Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V.