Технічний опис FP75R07N2E4BOSA1 Infineon Technologies
Description: IGBT MODULE 650V 95A, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V.
Інші пропозиції FP75R07N2E4BOSA1
| Фото | Назва | Виробник | Інформація |
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Ціна |
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FP75R07N2E4BOSA1 | Виробник : Infineon Technologies |
 Description: IGBT MODULE 650V 95APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V |
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