Технічний опис FP75R12N2T7B16BPSA1 Infineon Technologies
Description: LOW POWER ECONO, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A, NTC Thermistor: Yes, Supplier Device Package: AG-ECONO2B, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 14 µA, Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V.
Інші пропозиції FP75R12N2T7B16BPSA1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FP75R12N2T7B16BPSA1 | Виробник : Infineon Technologies |
Description: LOW POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 14 µA Input Capacitance (Cies) @ Vce: 15.1 nF @ 25 V |
товару немає в наявності |
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FP75R12N2T7B16BPSA1 | Виробник : Infineon Technologies | IGBT Modules 1200 V, 75 A PIM IGBT module |
товару немає в наявності |