FP7G50US60 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: IGBT MODULE 600V 50A 250W EPM7
Packaging: Tube
Package / Case: EPM7
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EPM7
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
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Технічний опис FP7G50US60 Fairchild Semiconductor
Description: IGBT MODULE 600V 50A 250W EPM7, Packaging: Tube, Package / Case: EPM7, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: EPM7, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 250 W, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V.
Інші пропозиції FP7G50US60
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
FP7G50US60 | onsemi |
Description: IGBT MODULE 600V 50A 250W EPM7 Packaging: Tube Package / Case: EPM7 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: No Supplier Device Package: EPM7 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| FP7G50US60 |
|
Виробник: onsemi
Description: IGBT MODULE 600V 50A 250W EPM7
Packaging: Tube
Package / Case: EPM7
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EPM7
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
Description: IGBT MODULE 600V 50A 250W EPM7
Packaging: Tube
Package / Case: EPM7
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: EPM7
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.