FQA30N40

Виробник: onsemi
Description: MOSFET N-CH 400V 30A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube

Виробник: onsemi
MOSFETs 400V N-Channel QFET

Виробник: ONSEMI
Description: ONSEMI - FQA30N40 - Leistungs-MOSFET, n-Kanal, 400 V, 30 A, 0.14 ohm, TO-3PN, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 400
Dauer-Drainstrom Id: 30
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 290
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.14
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 5
SVHC: Lead (17-Jan-2022)

Виробник: ON Semiconductor
Trans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Tube

Виробник: ON Semiconductor
Trans MOSFET N-CH 400V 30A 3-Pin(3+Tab) TO-3P Tube