Технічний опис FQA47P06 FSC
Description: MOSFET P-CH 60V 55A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Supplier Device Package: TO-3P.
Інші пропозиції FQA47P06
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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FQA47P06 | Виробник : onsemi |
Description: MOSFET P-CH 60V 55A TO3PInput Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Supplier Device Package: TO-3P |
товару немає в наявності |

