FQA7N90 Fairchild Semiconductor
Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 900V 7.4A TO3P
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 198W (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
| Кількість | Ціна |
|---|---|
| 187+ | 116.57 грн |
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Технічний опис FQA7N90 Fairchild Semiconductor
Description: MOSFET N-CH 900V 7.4A TO3P, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-3P, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 198W (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.
Інші пропозиції FQA7N90
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FQA7N90 | Виробник : ONS/FAI |
MOSFET N-CH 900V 7.4A 1.55Om TO-3P Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
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FQA7N90 | Виробник : onsemi |
Description: MOSFET N-CH 900V 7.4A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 3.7A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V |
товару немає в наявності |
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FQA7N90 | Виробник : onsemi / Fairchild |
MOSFET 900V N-Channel QFET |
товару немає в наявності |