| Кількість | Ціна |
|---|---|
| 1+ | 443.59 грн |
| 10+ | 390.52 грн |
| 25+ | 328.56 грн |
| 100+ | 278.28 грн |
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Технічний опис FQAF13N80 onsemi / Fairchild
Description: MOSFET N-CH 800V 8A TO3PF, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PF, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 120W (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3 Full Pack, Packaging: Tube.
Інші пропозиції FQAF13N80
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
FQAF13N80 | onsemi |
 Description: MOSFET N-CH 800V 8A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
| FQAF13N80 |
|
Виробник: onsemi
Description: MOSFET N-CH 800V 8A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 800V 8A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.