FQB27N25TM Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D2PAK (TO-263), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 417W (Tj), Rds On (Max) @ Id, Vgs: 131mOhm @ 25.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.