Технічний опис FQD10N20CTM ON Semiconductor
Description: MOSFET N-CH 200V 7.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Інші пропозиції FQD10N20CTM
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| FQD10N20CTM | On Semiconductor |
 MOSFET N-CH 200V 7.8A DPAK Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
FQD10N20CTM | onsemi |
Description: MOSFET N-CH 200V 7.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
FQD10N20CTM | onsemi / Fairchild |
MOSFET N-CH/200V/10A/QFET |
товару немає в наявності |
В кошику од. на суму грн. |
 |
FQD10N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 50W Case: DPAK Mounting: SMD Gate charge: 26nC Technology: QFET® Drain current: 5A Kind of channel: enhancement Drain-source voltage: 200V Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.36Ω |
товару немає в наявності |
В кошику од. на суму грн. |
| FQD10N20CTM |
|
Виробник: On Semiconductor
MOSFET N-CH 200V 7.8A DPAK Транзистори
MOSFET N-CH 200V 7.8A DPAK Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| FQD10N20CTM |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Description: MOSFET N-CH 200V 7.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.9A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| FQD10N20CTM |
|
Виробник: onsemi / Fairchild
MOSFET N-CH/200V/10A/QFET
MOSFET N-CH/200V/10A/QFET
товару немає в наявності
В кошику
од. на суму грн.
| FQD10N20CTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 50W
Case: DPAK
Mounting: SMD
Gate charge: 26nC
Technology: QFET®
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 200V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.36Ω
товару немає в наявності
В кошику
од. на суму грн.