
FQD12P10TM_F085 Fairchild Semiconductor
на замовлення 2353 шт:
термін постачання 21-31 дні (днів)
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Технічний опис FQD12P10TM_F085 Fairchild Semiconductor
Description: MOSFET P-CH 100V 9.4A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції FQD12P10TM_F085
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQD12P10TM_F085 | Виробник : Fairchild Semiconductor |
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на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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FQD12P10TM-F085 | Виробник : ON Semiconductor |
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товару немає в наявності |
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FQD12P10TM-F085 | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -37.6A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 27nC Application: automotive industry Drain current: -6A кількість в упаковці: 2500 шт |
товару немає в наявності |
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FQD12P10TM-F085 | Виробник : ON Semiconductor |
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товару немає в наявності |
|
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FQD12P10TM_F085 | Виробник : Fairchild Semiconductor |
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товару немає в наявності |
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FQD12P10TM-F085 | Виробник : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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FQD12P10TM-F085 | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 4.7A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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FQD12P10TM-F085 | Виробник : onsemi / Fairchild |
![]() |
товару немає в наявності |
|
![]() |
FQD12P10TM-F085 | Виробник : ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -37.6A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 27nC Application: automotive industry Drain current: -6A |
товару немає в наявності |