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Технічний опис FQD19N10TM onsemi / Fairchild
Description: MOSFET N-CH 100V 15.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V.
Інші пропозиції FQD19N10TM
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FQD19N10TM | Виробник : FAIRCHILD |
 TO-252 0715+ |
на замовлення 5000 шт: термін постачання 14-28 дні (днів) |
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FQD19N10TM | Виробник : onsemi |
Description: MOSFET N-CH 100V 15.6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 25 V |
товару немає в наявності |
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FQD19N10TM | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.8A; Idm: 62.4A; 50W; DPAK Case: DPAK Mounting: SMD Polarisation: unipolar Gate charge: 25nC On-state resistance: 0.1Ω Kind of channel: enhancement Power dissipation: 50W Drain current: 9.8A Gate-source voltage: ±25V Pulsed drain current: 62.4A Drain-source voltage: 100V Technology: QFET® Kind of package: reel; tape Type of transistor: N-MOSFET |
товару немає в наявності |