FQD4N25TM-WS onsemi
Виробник: onsemiDescription: MOSFET N-CH 250V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 3653 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 814+ | 25.83 грн |
Відгуки про товар
Написати відгук
Технічний опис FQD4N25TM-WS onsemi
Description: MOSFET N-CH 250V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V, Power Dissipation (Max): 2.5W (Ta), 37W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Інші пропозиції FQD4N25TM-WS за ціною від 30.60 грн до 66.70 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQD4N25TM-WS | Виробник : onsemi / Fairchild |
MOSFET 250V N-Channel QFET |
на замовлення 821 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
FQD4N25TM-WS | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 250V Drain current: 1.9A On-state resistance: 1.75Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товару немає в наявності |
|||||||||||
|
|
FQD4N25TM-WS | Виробник : onsemi |
Description: MOSFET N-CH 250V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.5A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
товару немає в наявності |
|||||||||||
|
|
FQD4N25TM-WS | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 1.9A; Idm: 12A; 37W; DPAK Mounting: SMD Power dissipation: 37W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 12A Case: DPAK Drain-source voltage: 250V Drain current: 1.9A On-state resistance: 1.75Ω Type of transistor: N-MOSFET |
товару немає в наявності |