FQD4P40TM onsemi
Виробник: onsemiDescription: MOSFET P-CH 400V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 2458 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.62 грн |
| 10+ | 87.23 грн |
| 100+ | 68.00 грн |
| 500+ | 52.72 грн |
| 1000+ | 41.62 грн |
Відгуки про товар
Написати відгук
Технічний опис FQD4P40TM onsemi
Description: MOSFET P-CH 400V 2.7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V.
Інші пропозиції FQD4P40TM за ціною від 38.31 грн до 104.46 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQD4P40TM | Виробник : onsemi / Fairchild |
MOSFET 400V P-Channel QFET |
на замовлення 2540 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
 |
FQD4P40TM | Виробник : ON Semiconductor |
Trans MOSFET P-CH 400V 2.7A 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
|||||||||||||||
| FQD4P40TM | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.71A кількість в упаковці: 1 шт |
товару немає в наявності |
||||||||||||||||
|
|
FQD4P40TM | Виробник : onsemi |
Description: MOSFET P-CH 400V 2.7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 3.1Ohm @ 1.35A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V |
товару немає в наявності |
|||||||||||||||
| FQD4P40TM | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -400V; -1.71A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -400V Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain current: -1.71A |
товару немає в наявності |