FQI15P12TU Fairchild Semiconductor

Description: MOSFET P-CH 120V 15A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.75W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Bulk.