Продукція > FAIRCHILD SEMICONDUCTOR > FQI32N20CTU
FQI32N20CTU

FQI32N20CTU Fairchild Semiconductor

FAIRS22208-1.pdf?t.download=true&u=5oefqw Виробник: Fairchild Semiconductor
Description: MOSFET N-CH 200V 28A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
на замовлення 1832 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
307+69.88 грн
Мінімальне замовлення: 307
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис FQI32N20CTU Fairchild Semiconductor

Description: MOSFET N-CH 200V 28A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V, Power Dissipation (Max): 3.13W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262 (I2PAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.

Інші пропозиції FQI32N20CTU

Фото Назва Виробник Інформація Доступність
Ціна
FQI32N20CTU FQI32N20CTU Виробник : onsemi FQB32N20C%2C%20FQI32N20C.pdf Description: MOSFET N-CH 200V 28A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 14A, 10V
Power Dissipation (Max): 3.13W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.