FQI3P50TU FSC

Description: MOSFET P-CH 500V 2.7A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-262 (I2PAK), Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 85W (Tc), Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.