| Кількість | Ціна |
|---|---|
| 9+ | 39.71 грн |
| 10+ | 38.50 грн |
| 100+ | 23.20 грн |
| 500+ | 19.40 грн |
| 1000+ | 16.50 грн |
| 2000+ | 14.64 грн |
| 4000+ | 13.81 грн |
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Технічний опис FQN1N50CTA onsemi / Fairchild
Description: MOSFET N-CH 500V 380MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 890mW (Ta), 2.08W (Tc), Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V, Current - Continuous Drain (Id) @ 25°C: 380mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Інші пропозиції FQN1N50CTA за ціною від 27.02 грн до 69.12 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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FQN1N50CTA | onsemi |
 Description: MOSFET N-CH 500V 380MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
на замовлення 139 шт: термін постачання 21-31 дні (днів) |
|
| FQN1N50CTA |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
на замовлення 139 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.12 грн |
| 10+ | 41.36 грн |
| 100+ | 27.02 грн |