FQP27N25 onsemi
Виробник: onsemi
Description: MOSFET N-CH 250V 25.5A TO220-3
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис FQP27N25 onsemi
Description: MOSFET N-CH 250V 25.5A TO220-3, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції FQP27N25
| Фото | Назва | Виробник | Інформація |
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FQP27N25 | Виробник : onsemi / Fairchild |
MOSFETs 250V N-Channel QFET |
товару немає в наявності |