FQP9N30 onsemi
Виробник: onsemi
Description: MOSFET N-CH 300V 9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 98W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 3+ | 143.44 грн |
| 10+ | 123.94 грн |
| 100+ | 99.59 грн |
| 500+ | 76.79 грн |
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Технічний опис FQP9N30 onsemi
Description: MOSFET N-CH 300V 9A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 98W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції FQP9N30
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| FQP9N30 | Виробник : ON Semiconductor / Fairchild |
MOSFET 300V N-Channel QFET |
на замовлення 749 шт: термін постачання 21-30 дні (днів) |
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FQP9N30 | Виробник : Fairchild Semiconductor |
Description: Power Field-Effect Transistor, 9 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 98W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V |
товару немає в наявності |