Технічний опис FQPF10N20 FAIR
Description: MOSFET N-CH 200V 6.8A TO220F, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції FQPF10N20
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQPF10N20 | Виробник : onsemi |
Description: MOSFET N-CH 200V 6.8A TO220FOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
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FQPF10N20 | Виробник : onsemi / Fairchild |
MOSFET 200V N-Ch MOSFET |
товару немає в наявності |


