Технічний опис FQPF16N25C FAIRCHILD
Description: MOSFET N-CH 250V 15.6A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Інші пропозиції FQPF16N25C
| Фото | Назва | Виробник | Інформація |
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FQPF16N25C | Виробник : onsemi |
 Description: MOSFET N-CH 250V 15.6A TO220FInput Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 43W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
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FQPF16N25C | Виробник : onsemi / Fairchild |
MOSFET N-CH/250V /16A/QFET |
товару немає в наявності |
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FQPF16N25C | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.8A; Idm: 62.4A; 43W; TO220FP Type of transistor: N-MOSFET Power dissipation: 43W Case: TO220FP Mounting: THT Gate charge: 53.5nC Kind of package: tube Pulsed drain current: 62.4A Polarisation: unipolar Drain-source voltage: 250V On-state resistance: 0.27Ω Kind of channel: enhancement Drain current: 9.8A Gate-source voltage: ±30V |
товару немає в наявності |