FQPF2N80YDTU Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: MOSFET N-CH 800V 1.5A TO220F-3
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
на замовлення 425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 263+ | 76.5 грн |
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Технічний опис FQPF2N80YDTU Fairchild Semiconductor
Description: MOSFET N-CH 800V 1.5A TO220F-3, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Інші пропозиції FQPF2N80YDTU за ціною від 61.3 грн до 171.61 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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FQPF2N80YDTU | Виробник : onsemi |
Description: MOSFET N-CH 800V 1.5A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 6.3Ohm @ 750mA, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
на замовлення 2144 шт: термін постачання 21-31 дні (днів) |
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FQPF2N80YDTU | Виробник : onsemi / Fairchild |
MOSFET QF 800V 6.3OHM TO220F |
на замовлення 589 шт: термін постачання 21-30 дні (днів) |
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FQPF2N80YDTU | Виробник : ON Semiconductor |
Trans MOSFET N-CH 800V 1.5A 3-Pin(3+Tab) TO-220F Tube |
товар відсутній |
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FQPF2N80YDTU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 6.3Ω Drain current: 0.95A Drain-source voltage: 800V Power dissipation: 35W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 6A кількість в упаковці: 1 шт |
товар відсутній |
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FQPF2N80YDTU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 950mA; Idm: 6A; 35W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube On-state resistance: 6.3Ω Drain current: 0.95A Drain-source voltage: 800V Power dissipation: 35W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Type of transistor: N-MOSFET Pulsed drain current: 6A |
товар відсутній |