FQPF3N90_NL onsemi
Виробник: onsemi
Description: MOSFET N-CH 900V 2.1A TO220F
Power Dissipation (Max): 43W (Tc)
Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.05A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 5V @ 250µA
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Технічний опис FQPF3N90_NL onsemi
Description: MOSFET N-CH 900V 2.1A TO220F, Power Dissipation (Max): 43W (Tc), Rds On (Max) @ Id, Vgs: 4.25Ohm @ 1.05A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 5V @ 250µA.
Інші пропозиції FQPF3N90_NL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FQPF3N90_NL | Виробник : onsemi / Fairchild |
MOSFET Trans MOS N-Ch 900V 2.1A 3-Pin 3+Tab |
товару немає в наявності |