Технічний опис FQPF45N15V2 ON Semiconductor
Description: MOSFET N-CH 150V 45A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V.
Інші пропозиції FQPF45N15V2
| Фото | Назва | Виробник | Інформація |
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FQPF45N15V2 | Виробник : ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Drain-source voltage: 150V Drain current: 31A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Gate charge: 94nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 180A Mounting: THT Case: TO220FP кількість в упаковці: 1 шт |
товару немає в наявності |
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FQPF45N15V2 | Виробник : onsemi |
Description: MOSFET N-CH 150V 45A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 22.5A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 25 V |
товару немає в наявності |
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FQPF45N15V2 | Виробник : onsemi / Fairchild |
MOSFETs N-CH/150V/45A |
товару немає в наявності |
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FQPF45N15V2 | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 31A; Idm: 180A; 66W; TO220FP Drain-source voltage: 150V Drain current: 31A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Gate charge: 94nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 180A Mounting: THT Case: TO220FP |
товару немає в наявності |