Технічний опис FQPF47P06 onsemi
Description: MOSFET P-CH 60V 30A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V.
Інші пропозиції FQPF47P06 за ціною від 95.91 грн до 299.89 грн
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FQPF47P06 | ONSEMI |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -21.2A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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FQPF47P06 | onsemi / Fairchild |
MOSFETs 60V P-Channel QFET |
на замовлення 7962 шт: термін постачання 21-30 дні (днів) |
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FQPF47P06 | onsemi |
Description: MOSFET P-CH 60V 30A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
на замовлення 6087 шт: термін постачання 21-31 дні (днів) |
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| FQPF47P06 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21.2A; 62W; TO220FP
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21.2A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 268.76 грн |
| 3+ | 223.86 грн |
| 10+ | 179.92 грн |
| FQPF47P06 |
|
Виробник: onsemi / Fairchild
MOSFETs 60V P-Channel QFET
MOSFETs 60V P-Channel QFET
на замовлення 7962 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 294.12 грн |
| 10+ | 128.32 грн |
| 100+ | 108.14 грн |
| 500+ | 99.19 грн |
| FQPF47P06 |
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Виробник: onsemi
Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET P-CH 60V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 6087 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 299.89 грн |
| 50+ | 148.79 грн |
| 100+ | 135.22 грн |
| 500+ | 104.59 грн |
| 1000+ | 97.42 грн |
| 2000+ | 95.91 грн |