| Кількість | Ціна |
|---|---|
| 4+ | 107.72 грн |
| 10+ | 94.83 грн |
| 100+ | 63.65 грн |
| 500+ | 52.58 грн |
| 800+ | 42.36 грн |
| 2400+ | 39.05 грн |
| 5600+ | 38.69 грн |
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Технічний опис FQPF5P20RDTU onsemi / Fairchild
Description: MOSFET P-CH 200V 2.15A TO220F, Supplier Device Package: TO-220F, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete.
Інші пропозиції FQPF5P20RDTU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FQPF5P20RDTU | onsemi |
 Description: MOSFET P-CH 200V 2.15A TO220FSupplier Device Package: TO-220F Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| FQPF5P20RDTU |
|
Виробник: onsemi
Description: MOSFET P-CH 200V 2.15A TO220F
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Description: MOSFET P-CH 200V 2.15A TO220F
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.