FQPF7N65CYDTU onsemi
Виробник: onsemiDescription: MOSFET N-CH 650V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
на замовлення 52651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 36.82 грн |
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Технічний опис FQPF7N65CYDTU onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, N, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Formed Leads, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F-3 (Y-Forming), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V.
Інші пропозиції FQPF7N65CYDTU за ціною від 42.17 грн до 55.91 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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FQPF7N65CYDTU | Виробник : ON Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube |
на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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FQPF7N65CYDTU | Виробник : ON Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube |
на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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FQPF7N65CYDTU | Виробник : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, N Packaging: Bulk Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
на замовлення 1572 шт: термін постачання 21-31 дні (днів) |
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FQPF7N65CYDTU | Виробник : ON Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube |
товар відсутній |
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FQPF7N65CYDTU | Виробник : onsemi |
Description: MOSFET N-CH 650V 7A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
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FQPF7N65CYDTU | Виробник : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.2A; Idm: 28A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.2A Pulsed drain current: 28A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |