FQPF9N25CYDTU onsemi

Description: MOSFET N-CH 250V 8.8A TO220F-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3 (Y-Forming), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Formed Leads, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V.