| Кількість | Ціна |
|---|---|
| 6+ | 64.96 грн |
| 10+ | 56.17 грн |
| 100+ | 37.43 грн |
| 500+ | 29.60 грн |
Відгуки про товар
Написати відгук
Технічний опис FQT13N06TF onsemi / Fairchild
Description: MOSFET N-CH 60V 2.8A SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.1W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції FQT13N06TF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
FQT13N06TF | onsemi |
 Description: MOSFET N-CH 60V 2.8A SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| FQT13N06TF |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 2.8A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.8A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.