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Технічний опис FQT1N60CTF-WS onsemi / Fairchild
Description: MOSFET N-CH 600V 200MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.1W (Tc), Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V, Current - Continuous Drain (Id) @ 25°C: 200mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції FQT1N60CTF-WS
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FQT1N60CTF-WS | onsemi |
 Description: MOSFET N-CH 600V 200MA SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
FQT1N60CTF-WS | onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| FQT1N60CTF-WS | ON Semiconductor |
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |
| FQT1N60CTF-WS | ON Semiconductor |
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. |
| FQT1N60CTF-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FQT1N60CTF-WS |
|
Виробник: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FQT1N60CTF-WS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| FQT1N60CTF-WS |
|
Виробник: ON Semiconductor
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.