FQT4N20TF Fairchild Semiconductor

Description: MOSFET N-CH 200V 850MA SOT223-4, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 2.2W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 425mA, 10V, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.