FQT4N25TF onsemi
Виробник: onsemiDescription: MOSFET N-CH 250V 830MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 830mA (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 415mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
на замовлення 2810 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.05 грн |
| 10+ | 37 грн |
| 100+ | 25.58 грн |
| 500+ | 20.06 грн |
| 1000+ | 17.07 грн |
| 2000+ | 15.21 грн |
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Технічний опис FQT4N25TF onsemi
Description: MOSFET N-CH 250V 830MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 830mA (Tc), Rds On (Max) @ Id, Vgs: 1.75Ohm @ 415mA, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції FQT4N25TF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQT4N25TF | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3.3A Case: SOT223 Drain-source voltage: 250V Drain current: 0.66A On-state resistance: 1.75Ω Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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FQT4N25TF | Виробник : onsemi |
Description: MOSFET N-CH 250V 830MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 830mA (Tc) Rds On (Max) @ Id, Vgs: 1.75Ohm @ 415mA, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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FQT4N25TF | Виробник : onsemi / Fairchild |
MOSFET 250V Single |
товар відсутній |
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FQT4N25TF | Виробник : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.66A; Idm: 3.3A; 2.5W; SOT223 Mounting: SMD Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 5.6nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 3.3A Case: SOT223 Drain-source voltage: 250V Drain current: 0.66A On-state resistance: 1.75Ω Type of transistor: N-MOSFET |
товар відсутній |