FR306G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1250+ | 9.91 грн |
| 2500+ | 8.79 грн |
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Технічний опис FR306G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Інші пропозиції FR306G за ціною від 13.17 грн до 33.86 грн
| Фото | Назва | Виробник | Інформація |
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FR306G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 3734 шт: термін постачання 21-31 дні (днів) |
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FR306G | Виробник : EIC Semiconductor |
Rectifier Diode Switching 800V 3A 500ns 2-Pin DO-201AD |
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FR306G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO27; Ufmax: 1.3V Kind of package: tape Max. off-state voltage: 0.8kV Max. forward voltage: 1.3V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 125A Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Mounting: THT Case: DO27 кількість в упаковці: 5 шт |
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FR306G | Виробник : SMC Diode Solutions |
Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 560 V |
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FR306G | Виробник : Taiwan Semiconductor |
Rectifiers 500ns, 3A, 800V, Fast Recovery Rectifier |
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FR306G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO27; Ufmax: 1.3V Kind of package: tape Max. off-state voltage: 0.8kV Max. forward voltage: 1.3V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 0.5µs Max. forward impulse current: 125A Type of diode: rectifying Features of semiconductor devices: fast switching; glass passivated Mounting: THT Case: DO27 |
товар відсутній |