| Кількість | Ціна |
|---|---|
| 5+ | 70.06 грн |
| 10+ | 42.88 грн |
| 100+ | 24.30 грн |
| 500+ | 18.64 грн |
| 1000+ | 16.90 грн |
| 2500+ | 15.29 грн |
| 5000+ | 13.69 грн |
Відгуки про товар
Написати відгук
Технічний опис FR606-G Comchip Technology
Description: DIODE GEN PURP 800V 6A R-6, Technology: Standard, Reverse Recovery Time (trr): 500 ns, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 10 µA @ 560 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 150pF @ 4V, 1MHz.
Інші пропозиції FR606-G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| FR606G | SMC Diode Solutions |
Description: DIODE GEN PURP 800V 6A R-6Technology: Standard Reverse Recovery Time (trr): 500 ns Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: R-6, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 10 µA @ 560 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 150pF @ 4V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. |
| FR606G |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE GEN PURP 800V 6A R-6
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 560 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Description: DIODE GEN PURP 800V 6A R-6
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: R-6, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 560 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
товару немає в наявності
В кошику
од. на суму грн.



