Технічний опис FS01MR12A8MA2BHPSA1 Infineon Technologies
Description: INFINEON - FS01MR12A8MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 500 A, 1.2 kV, 1870 µohm, Modul, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: YES, Dauer-Drainstrom Id: 500A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4.55V, MOSFET-Modul-Konfiguration: SixPack, euEccn: NLR, Verlustleistung: -, Bauform - Transistor: Modul, Anzahl der Pins: 30Pin(s), Produktpalette: HybridPACK G2 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 18V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 1870µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції FS01MR12A8MA2BHPSA1 за ціною від 102540.38 грн до 149804.86 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FS01MR12A8MA2BHPSA1 | INFINEON |
 Description: INFINEON - FS01MR12A8MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 500 A, 1.2 kV, 1870 µohm, ModultariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 500A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.55V MOSFET-Modul-Konfiguration: SixPack euEccn: NLR Verlustleistung: - Bauform - Transistor: Modul Anzahl der Pins: 30Pin(s) Produktpalette: HybridPACK G2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 1870µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FS01MR12A8MA2BHPSA1 | Infineon Technologies |
Description: FS01MR12A8MA2BHPSA1 Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Vgs(th) (Max) @ Id: 4.55V @ 240mA Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V Current - Continuous Drain (Id) @ 25°C: 500A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| FS01MR12A8MA2BHPSA1 |
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Виробник: INFINEON
Description: INFINEON - FS01MR12A8MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 500 A, 1.2 kV, 1870 µohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 500A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.55V
MOSFET-Modul-Konfiguration: SixPack
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Modul
Anzahl der Pins: 30Pin(s)
Produktpalette: HybridPACK G2 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1870µohm
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - FS01MR12A8MA2BHPSA1 - Siliziumkarbid-MOSFET, SixPack, n-Kanal, 500 A, 1.2 kV, 1870 µohm, Modul
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: YES
Dauer-Drainstrom Id: 500A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4.55V
MOSFET-Modul-Konfiguration: SixPack
euEccn: NLR
Verlustleistung: -
Bauform - Transistor: Modul
Anzahl der Pins: 30Pin(s)
Produktpalette: HybridPACK G2 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 18V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 1870µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 102540.38 грн |
| FS01MR12A8MA2BHPSA1 |
Виробник: Infineon Technologies
Description: FS01MR12A8MA2BHPSA1
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Vgs(th) (Max) @ Id: 4.55V @ 240mA
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Description: FS01MR12A8MA2BHPSA1
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Vgs(th) (Max) @ Id: 4.55V @ 240mA
Rds On (Max) @ Id, Vgs: 1.87mOhm @ 18V, 500A
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 750V
Current - Continuous Drain (Id) @ 25°C: 500A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 149804.86 грн |