FS02MR12A8MA2BBPSA1 Infineon Technologies

Description: MOSFET 6N-CH 1200V 390A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 390A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 34500pF @ 750V, Rds On (Max) @ Id, Vgs: 1.9mOhm @ 390A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1190nC @ 18V, Vgs(th) (Max) @ Id: 4.55V @ 160mA.