FS150R12KE3GBOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Технічний опис FS150R12KE3GBOSA1 Infineon Technologies
Description: IGBT MOD 1200V 200A 695W, Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V, Current - Collector Cutoff (Max): 5 mA, Power - Max: 695 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 200 A, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, Operating Temperature: -40°C ~ 125°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.
Інші пропозиції FS150R12KE3GBOSA1
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FS150R12KE3GBOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 200A 695W Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 695 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V |
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