FS150R12PT4BOSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - FS150R12PT4BOSA1 - IGBT-Modul, Sechserpack [Vollbrücke], 150 A, 1.75 V, 680 W, 150 °C, Modul
tariffCode: 85413000
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: IGBT 4 [Trench/Feldstop]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 1.75V
usEccn: EAR99
IGBT-Anschluss: Einpressmontage
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.75V
Verlustleistung Pd: 680W
euEccn: NLR
Verlustleistung: 680W
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 1.2kV
Dauerkollektorstrom: 150A
Produktpalette: EconoPACK 4
Kollektor-Emitter-Spannung, max.: 1.2kV
IGBT-Konfiguration: Sechserpack [Vollbrücke]
productTraceability: Yes-Date/Lot Code
DC-Kollektorstrom: 150A
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
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Технічний опис FS150R12PT4BOSA1 INFINEON
Description: INFINEON - FS150R12PT4BOSA1 - IGBT-Modul, Sechserpack [Vollbrücke], 150 A, 1.75 V, 680 W, 150 °C, Modul, tariffCode: 85413000, Transistormontage: Platte, rohsCompliant: YES, IGBT-Technologie: IGBT 4 [Trench/Feldstop], Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 1.75V, usEccn: EAR99, IGBT-Anschluss: Einpressmontage, Kollektor-Emitter-Sättigungsspannung Vce(on): 1.75V, Verlustleistung Pd: 680W, euEccn: NLR, Verlustleistung: 680W, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 1.2kV, Dauerkollektorstrom: 150A, Produktpalette: EconoPACK 4, Kollektor-Emitter-Spannung, max.: 1.2kV, IGBT-Konfiguration: Sechserpack [Vollbrücke], productTraceability: Yes-Date/Lot Code, DC-Kollektorstrom: 150A, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції FS150R12PT4BOSA1 за ціною від 9973.46 грн до 9973.46 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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FS150R12PT4BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 680W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
|
| FS150R12PT4BOSA1 |
|
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Description: IGBT MOD 1200V 200A 680W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 9973.46 грн |