FS225R12KE4BOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Відгуки про товар
Написати відгук
Технічний опис FS225R12KE4BOSA1 Infineon Technologies
Description: IGBT MOD 1200V 320A 1100W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 320 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1100 W, Current - Collector Cutoff (Max): 3 mA, Input Capacitance (Cies) @ Vce: 13 nF @ 25 V.
Інші пропозиції FS225R12KE4BOSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
FS225R12KE4BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 320A 1100W Input Capacitance (Cies) @ Vce: 13 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 1100 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 320 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 225A Operating Temperature: -40°C ~ 150°C Configuration: Full Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |