FS25R12W1T4B11BOMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT MOD 1200V 45A 205W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 205 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2739.82 грн |
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Технічний опис FS25R12W1T4B11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 45A 205W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 205 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 1.45 nF @ 25 V.